Researchers at Wuhan University have found a way to reduce the misfit in the coalescence boundary of GaN grown on the sidewall and c-plane regions of the substrate by adopting a PSSA (patterned sapphire with silica array) substrate. Wuhan University professor Shengjun Zhou directed the research, and says PSSA substrates can significantly improve the efficiency…
To access this post, you must register DVN Lighting Gold Membership or DVN Lighting Platinum Membership.
